发明名称 POLYCRYSTALLIZATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a polycrystallization method which can improve production efficiency.SOLUTION: A polycrystallization method for polycrystallizing an amorphous semiconductor film 13 that has a natural oxide film 14 on its surface includes the steps of: cleaning the natural oxide film 14 while leaving the natural oxide film 14 on the surface of the amorphous semiconductor film 13; and polycrystallizing the amorphous semiconductor film 13 in a state where the natural oxide film 14 is left.
申请公布号 JP2015099853(A) 申请公布日期 2015.05.28
申请号 JP20130239048 申请日期 2013.11.19
申请人 JAPAN DISPLAY INC 发明人 ITO NAOYA;JINNAI NORIHIDE;MIZUKOSHI HIROBUMI
分类号 H01L21/20;G02F1/1368;H01L21/304 主分类号 H01L21/20
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