发明名称 |
POLYCRYSTALLIZATION METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a polycrystallization method which can improve production efficiency.SOLUTION: A polycrystallization method for polycrystallizing an amorphous semiconductor film 13 that has a natural oxide film 14 on its surface includes the steps of: cleaning the natural oxide film 14 while leaving the natural oxide film 14 on the surface of the amorphous semiconductor film 13; and polycrystallizing the amorphous semiconductor film 13 in a state where the natural oxide film 14 is left. |
申请公布号 |
JP2015099853(A) |
申请公布日期 |
2015.05.28 |
申请号 |
JP20130239048 |
申请日期 |
2013.11.19 |
申请人 |
JAPAN DISPLAY INC |
发明人 |
ITO NAOYA;JINNAI NORIHIDE;MIZUKOSHI HIROBUMI |
分类号 |
H01L21/20;G02F1/1368;H01L21/304 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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