发明名称 |
MECHANISMS FOR FORMING PATTERNS |
摘要 |
The present disclosure provides a method for forming patterns in a semiconductor device. In accordance with some embodiments, the method includes providing a substrate and a patterning-target layer over the substrate; forming one or more mandrel patterns over the patterning-target layer; forming an opening in a resist layer by removing a first mandrel pattern and removing a portion of the resist layer that covers the first mandrel pattern; forming spacers adjacent to sidewalls of a second mandrel pattern; removing the second mandrel pattern to expose the spacers; forming a patch pattern over the spacers and aligned with the opening; etching the patterning-target layer using the patch pattern and the spacers as mask elements to form final patterns; and removing the patch pattern and the spacers to expose the final patterns. |
申请公布号 |
US2015147887(A1) |
申请公布日期 |
2015.05.28 |
申请号 |
US201314090848 |
申请日期 |
2013.11.26 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Liu Ru-Gun;Lin Chung-Te;Shieh Ming-Feng;Gau Tsai-Sheng;Chang Shih-Ming |
分类号 |
H01L21/306;H01L21/308 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
1. A method for forming patterns in a semiconductor device, comprising:
providing a substrate and a patterning-target layer over the substrate; forming one or more mandrel patterns over the patterning-target layer; forming an opening in a resist layer by removing a first mandrel pattern and a portion of the resist layer that covers the first mandrel pattern; forming spacers adjacent to sidewalls of a second mandrel pattern; removing the second mandrel pattern to expose the spacers; forming a patch pattern over the spacers and aligned with the opening; etching the patterning-target layer using the patch pattern and the spacers as mask elements to form final patterns; and removing the patch pattern and the spacers to expose the final patterns, wherein a first final pattern is located at a distance in a range from about (n+0.3) times of a pitch to about (n+0.8) times of the pitch away from an adjacent second final pattern, wherein n is an integer number, and wherein the pitch is a distance between two adjacent spacers plus a width of a spacer. |
地址 |
Hsin-Chu TW |