发明名称 PASSIVATION ASH/OXIDATION OF BARE COPPER
摘要 A semiconductor wafer has a clean, high quality Cu oxide formed at the surface of exposed Cu when an extended non-fabrication process time (such as shipping to an assembly/test site or prolonged storage) is expected.
申请公布号 US2015147881(A1) 申请公布日期 2015.05.28
申请号 US201414552925 申请日期 2014.11.25
申请人 Texas Instruments Incorporated 发明人 McComb Jennifer Jean;Faust Richard A.
分类号 H01L21/768 主分类号 H01L21/768
代理机构 代理人
主权项 1. A method of fabricating an integrated circuit, comprising the steps of: processing a semiconductor wafer through the formation of a protective overcoat at a wafer fabrication facility; forming copper vias through the protective overcoat; forming a copper oxide on a surface of the copper vias, wherein the cooper oxide is a clean, high quality copper oxide; shipping the semiconductor wafer from the wafer fabrication facility to an assembly/test facility; removing the copper oxide at the assembly/test facility; and packaging the integrated circuit.
地址 Dallas TX US