发明名称 |
PASSIVATION ASH/OXIDATION OF BARE COPPER |
摘要 |
A semiconductor wafer has a clean, high quality Cu oxide formed at the surface of exposed Cu when an extended non-fabrication process time (such as shipping to an assembly/test site or prolonged storage) is expected. |
申请公布号 |
US2015147881(A1) |
申请公布日期 |
2015.05.28 |
申请号 |
US201414552925 |
申请日期 |
2014.11.25 |
申请人 |
Texas Instruments Incorporated |
发明人 |
McComb Jennifer Jean;Faust Richard A. |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method of fabricating an integrated circuit, comprising the steps of:
processing a semiconductor wafer through the formation of a protective overcoat at a wafer fabrication facility; forming copper vias through the protective overcoat; forming a copper oxide on a surface of the copper vias, wherein the cooper oxide is a clean, high quality copper oxide; shipping the semiconductor wafer from the wafer fabrication facility to an assembly/test facility; removing the copper oxide at the assembly/test facility; and packaging the integrated circuit. |
地址 |
Dallas TX US |