ONE TRANSISTOR AND ONE RESISTIVE (1T1R) RANDOM ACCESS MEMORY (RAM) STRUCTURE WITH DUAL SPACERS

摘要

The present disclosure provides methods of making resistive random access memory (RRAM) cells. The RRAM cell includes a transistor and an RRAM structure. The RRAM structure includes a bottom electrode having a via portion and a top portion, a resistive material layer on the bottom electrode having a width that is same as a width of the top portion of the bottom electrode; a capping layer over the bottom electrode, a first spacer surrounding the capping layer and a top electrode, a second spacer surround the top portion of the bottom electrode and the first spacer, and the top electrode. The RRAM cell further includes a conductive material connecting the top electrode of the RRAM structure to a metal layer.

主权项

1. A method of making a resistive random access memory (RRAM) cell, the method comprising:
forming a transistor on a semiconductor substrate; depositing a bottom electrode layer; depositing a resistive material layer; depositing a capping layer; depositing a top electrode layer; depositing a top electrode protective layer; forming a top electrode by patterning and etching the top electrode protective layer, the top electrode layer and the capping layer; forming a first spacer around the top electrode protective layer, the top electrode and the capping layer; forming a bottom electrode by patterning and etching the bottom electrode layer using the first spacer and the top electrode protective layer as an etch mask; andforming a second spacer around the bottom electrode and the first spacer.