| 发明名称 |
PROCESS CHAMBER APPARATUS, SYSTEMS, AND METHODS FOR CONTROLLING A GAS FLOW PATTERN |
| 摘要 |
Process chamber gas flow control apparatus may include, or be included in, a process chamber configured to process a substrate therein. The gas flow control apparatus may include a valve configured to seal an exhaust port in the process chamber. The valve may be moveable in the X, Y, and Z directions relative to the exhaust port to adjust a gas flow pattern (including, e.g., flow rate and/or flow uniformity) within the process chamber. Methods of adjusting a flow of a process gas within a process chamber are also provided, as are other aspects. |
| 申请公布号 |
US2015145413(A1) |
申请公布日期 |
2015.05.28 |
| 申请号 |
US201314091111 |
申请日期 |
2013.11.26 |
| 申请人 |
Applied Materials, Inc. |
发明人 |
Merry Nir;Sapkale Chandrakant M.;Kremerman Izya;Hudgens Jeffrey C. |
| 分类号 |
H01J37/32 |
主分类号 |
H01J37/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A process chamber gas flow control apparatus, comprising:
a process chamber configured to process a substrate therein, the process chamber having an exhaust port; and a valve configured to seal the exhaust port and configured to move in the X, Y, and Z directions relative to the exhaust port to adjust a gas flow pattern within the process chamber. |
| 地址 |
Santa Clara CA US |
