| 摘要 |
Embodiments of the present invention disclose a resistive memory and a method for fabricating the same. The resistive memory comprises a bottom electrode, a resistive layer and a top electrode. The resistive layer is located over the bottom electrode. The top electrode is located over the resistive layer. A conductive protrusion is provided on the bottom electrode. The conductive protrusion is embedded in the resistive layer, and has a top width smaller than a bottom width. Embodiments of the present invention further disclose a method for fabricating a resistive memory. According to the resistive memory and the method for fabricating the same provided by the embodiments of the present invention, by means of providing the conductive protrusion on the bottom electrode, a “lightning rod” effect may be occurred so that an electric field in the resistive layer is intensively distributed near the conductive protrusion. This significantly increases the possibility of generation of a conductive filament at the conductive protrusion, so that the conductive filament is not randomly formed. Thus, the stability of various parameters of the resistive memory is ensured, and thus the reliability and stability of the operation of the resistive memory are dramatically increased. |
