发明名称 AMPLIFIER CIRCUIT
摘要 An amplifier circuit with at least one basic transistor, at least one load transistor, and at least one impedance element, the basic transistor being connected to the impedance element and the load transistor, an amplifier input and output, the amplifier input being connected to the gate contact of the basic transistor and the amplifier output being connected to a source contact of the load transistor. Here the amplifier circuit has at least two combined amplifying cells, with each combined amplifying cell respectively including a basic transistor, a load transistor, and an impedance element, with the basic transistor and the load transistor being non-complementary single-pin transistors, and arranged cooperating with the impedance element, and every combined amplifying cell has an input and an output, which cell input being connected to a gate contact of the basic transistor and which cell output being connected to a contact of the impedance element.
申请公布号 US2015145598(A1) 申请公布日期 2015.05.28
申请号 US201414550155 申请日期 2014.11.21
申请人 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung E.V. 发明人 Maroldt Stephan
分类号 H03F1/02;H03F3/193 主分类号 H03F1/02
代理机构 代理人
主权项 1. An amplifier circuit, comprising at least one basic transistor (3), at least one load transistor (5), and at least one impedance element (4), with the basic transistor (3) being connected to the impedance element (4) and the load transistor (5), an amplifier input (1) and an amplifier output (2), said amplifier input (1) being connected to a gate contact (3.1) of the basic transistor (3), and the amplifier output (2) being connected to a contact of the impedance element (4), at least two combined amplifying cells, wherein for each of the two combined amplifying cells: the combined amplifying cell comprises one of the basic transistors (3), one of the load transistors (5), and one of the impedance elements (4);the basic transistor (3) and the load transistor (5) are embodied as non-complementary single-pin transistors;the basic transistor (3) and the load transistor (5) are embodied and arranged cooperating with the impedance element (4);the combined amplifying cell comprises a cell input and a cell output, with the cell input being connected to the gate contact (3.1) of the basic transistor (3) and the cell output being connected to a contact of the impedance element (4), and the two combined amplifying cells are arranged on a common semiconductor substrate.
地址 Munchen DE