发明名称 DEVICES, STRUCTURES, MATERIALS AND METHODS FOR VERTICAL LIGHT EMITTING TRANSISTORS AND LIGHT EMITTING DISPLAYS
摘要 Devices, structures, materials and methods for vertical light emitting transistors (VLETs) and light emitting displays (LEDs) are provided. In particular, architectures for vertical polymer light emitting transistors (VPLETs) for active matrix organic light emitting displays (AMOLEDs) and AMOLEDs incorporating such VPLETs are described. Porous conductive transparent electrodes (such as from nanowires (NW)) alone or in combination with conjugated light emitting polymers (LEPs) and dielectric materials are utilized in forming organic light emitting transistors (OLETs). Combinations of thin films of ionic gels, LEDs, porous conductive electrodes and relevant substrates and gates are utilized to construct LETs, including singly and doubly gated VPLETs. In addition, printing processes are utilized to deposit layers of one or more of porous conductive electrodes, LEDs, and dielectric materials on various substrates to construct LETs, including singly and doubly gated VPLETs.
申请公布号 WO2015077629(A1) 申请公布日期 2015.05.28
申请号 WO2014US66926 申请日期 2014.11.21
申请人 ATOM NANOELECTRONICS, INC. 发明人 LI, HUAPING
分类号 H05B33/06;H01L51/52 主分类号 H05B33/06
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