发明名称 |
METHOD AND APPARATUS FOR FILM DEPOSITION |
摘要 |
<p>A method and apparatus for depositing films on a substrate is described. The method includes depositing a film on a substrate with feature formed therein or thereon. The feature includes a first surface and a second surface that are at different levels. A least a portion of the deposited film is removed by exposing the substrate to an ion flux from a linear ion source. The ion flux has an ion angular spread of less than or equal to 90 degrees and greater than or equal to 15 degrees. In certain embodiments, the feature can be a nanoscale, high aspect ratio feature such as narrow, deep trench, a small diameter, deep hole, or a dual damascene structure. Such features are often found in integrated circuit devices.</p> |
申请公布号 |
WO2015077345(A1) |
申请公布日期 |
2015.05.28 |
申请号 |
WO2014US66423 |
申请日期 |
2014.11.19 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
TANG, XIANMIN;GODET, LUDOVIC;LIU, GUOJUN;TANG, JING;STOUT, PHILLIP;TAO, RONG |
分类号 |
C23C14/48;C23C14/06 |
主分类号 |
C23C14/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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