发明名称 |
COMPLEMENTARILY STRAINED FINFET STRUCTURE |
摘要 |
A complementary fin field-effect transistor (FinFET) includes a p-type device having a p-channel fin. The p-channel fin may include a first material that is lattice mismatched relative to a semiconductor substrate. The first material may have a compressive strain. The FinFET device also includes an n-type device having an n-channel fin. The n-channel fin may include a second material having a tensile strain that is lattice mismatched relative to the semiconductor substrate. The p-type device and the n-type device cooperate to form the complementary FinFET device. |
申请公布号 |
WO2015076956(A1) |
申请公布日期 |
2015.05.28 |
申请号 |
WO2014US61204 |
申请日期 |
2014.10.17 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
RIM, KERN;XU, JEFFREY JUNHAO;SONG, STANLEY SEUNGCHUL |
分类号 |
H01L21/8238;H01L27/092;H01L29/10 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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