发明名称 STRUCTURES HAVING ISOLATED GRAPHENE LAYERS WITH A REDUCED DIMENSION
摘要 Graphite-based devices with a reduced characteristic dimension and methods for forming such devices are provided. One or more thin films are deposited onto a substrate and undesired portions of the deposited thin film or thin films are removed to produce processed elements with reduced characteristic dimensions. Graphene layers are generated on selected processed elements or exposed portions of the substrate after removal of the processed elements. Multiple sets of graphene layers can be generated, each with a different physical characteristic, thereby producing a graphite-based device with multiple functionalities in the same device.
申请公布号 US2015147540(A1) 申请公布日期 2015.05.28
申请号 US201414396041 申请日期 2014.10.21
申请人 Solan, LLC 发明人 Davis Mark Alan
分类号 B82B1/00;C01B31/04 主分类号 B82B1/00
代理机构 代理人
主权项
地址 Salt Lake City UT US