发明名称 |
PLATING METHOD, PLATING APPARATUS, AND STORAGE MEDIUM |
摘要 |
A plating method can improve uniformity in a thickness of a plating layer formed on an inner surface of a recess. The plating method includes a loading process of loading the substrate in which the recess is formed into a casing; and a plating process of supplying a plating liquid to the substrate and forming a plating layer having a specific function on an inner surface of the recess. The plating process includes a first plating process of supplying a first plating liquid to the substrate and forming a first plating layer; and a second plating process of supplying a second plating liquid to the substrate and forming a second plating layer on the first plating layer after the first plating process. Further, a concentration of an additive contained in the first plating liquid is different from a concentration of an additive contained in the second plating liquid. |
申请公布号 |
US2015147476(A1) |
申请公布日期 |
2015.05.28 |
申请号 |
US201314404205 |
申请日期 |
2013.05.27 |
申请人 |
Tokyo Electron Limited |
发明人 |
Mizutani Nobutaka;Tanaka Takashi;Iwashita Mitsuaki |
分类号 |
C23C18/16 |
主分类号 |
C23C18/16 |
代理机构 |
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代理人 |
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主权项 |
1. A plating method of performing an electroless plating process to a recess formed in a substrate, the plating method comprising:
a loading process of loading the substrate in which the recess is formed into a casing; and a plating process of supplying a plating liquid to the substrate and forming a plating layer having a specific function on an inner surface of the recess, wherein the plating process includes a first plating process of supplying a first plating liquid to the substrate and forming a first plating layer; and a second plating process of supplying a second plating liquid to the substrate and forming a second plating layer on the first plating layer after the first plating process, and a concentration of an additive contained in the first plating liquid is different from a concentration of an additive contained in the second plating liquid. |
地址 |
Tokyo JP |