发明名称 |
NANOWIRE MOSFET WITH DIFFERENT SILICIDES ON SOURCE AND DRAIN |
摘要 |
A nanowire field effect transistor (FET) device and method for forming a nanowire FET device are provided. A nanowire FET including a source region and a drain region is formed. The nanowire FET further includes a nanowire that connects the source region and the drain region. A source silicide is formed on the source region, and a drain silicide is formed on the drain region. The source silicide is comprised of a first material that is different from a second material comprising the drain silicide. |
申请公布号 |
KR20150057962(A) |
申请公布日期 |
2015.05.28 |
申请号 |
KR20140124286 |
申请日期 |
2014.09.18 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
COLINGE JEAN PIERRE;LIN CHENG TUNG;CHING KUO CHENG;DIAZ CARLOS H. |
分类号 |
H01L21/335;H01L21/24;H01L29/78 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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