发明名称 APPARATUSES AND METHODS FOR MEMORY OPERATIONS HAVING VARIABLE LATENCIES
摘要 Apparatuses and methods for performing memory operations are described. In an example apparatus, a memory is configured to receive a memory instruction and perform a memory operation responsive to the memory instruction. The memory is further configured to provide an acknowledgement indicative of an end of the variable latency period wherein the acknowledgement includes information related to an acceptance of a memory instruction. Data associated with the memory instruction is exchanged with the memory following the acknowledgement. In an example method a read instruction and an address from which read data is to be read is received. A write operation is suspended responsive to the read instruction and an acknowledgement indicative of an end of the variable latency period is provided. Read data for the read instruction is provided and the write operation is continued to be suspended for a hold-off period following completion of the read operation.
申请公布号 SG11201503217T(A) 申请公布日期 2015.05.28
申请号 SGT11201503217 申请日期 2013.10.25
申请人 MICRON TECHNOLOGY, INC. 发明人 MIRICHIGNI, GRAZIANO;VILLA, CORRADO;PORZIO, LUCA
分类号 G06F13/14;G06F12/00;G06F13/38 主分类号 G06F13/14
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