MANUFACTURING DEVICE AND MANUFACTURING METHOD OF GROUP III NITRIDE SEMICONDUCTOR DEVICE; AND MANUFACTURING METHOD OF SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing device and manufacturing method of a group III nitride semiconductor device and a manufacturing method of a semiconductor wafer which are suitable for mass production and can grow the group III nitride semiconductor device under low temperature as comparison with the prior art.SOLUTION: A manufacturing device 1000 includes: a showerhead electrode 1100; a susceptor 1200 for supporting a growth substrate; a first gas supply pipe 1300; and a second gas supply pipe 1420. The first gas supply pipe 1300 has at least one or more first gas ejection ports and supplies an organic metal gas containing a group III metal as a first gas. A second gas supply pipe 1420 supplies a gas containing a nitride gas as a second gas. The showerhead electrode 1100 is arranged at a position further than the first gas ejection port of the first gas supply pipe 1300 when viewed from the susceptor 1200.