MRAM Device and Fabrication Method Thereof

摘要

According to an embodiment, a magnetoresistive random access memory (MRAM) device comprises a bottom electrode, a stack, a dielectric material, a dielectric layer, and a conductive material. The bottom electrode is over a substrate, and the stack is over the bottom electrode. The stack comprises a magnetic tunnel junction (MTJ) and a top electrode. The dielectric material is along a sidewall of the stack, and the dielectric material has a height greater than a thickness of the MTJ and less than a stack height. The dielectric layer is over the stack and the dielectric material. The conductive material extends through the dielectric layer to the top electrode of the stack.

主权项

1. A method for forming a magnetoresistive random access memory (MRAM) device, the method comprising:
forming a bottom electrode layer on a substrate; forming magnetic tunnel junction (MTJ) layers over the bottom electrode layer; forming a top electrode layer over the MTJ layers; removing portions of the MTJ layers and the top electrode layer to form a stack, the stack comprising remaining portions of the MTJ layers and the top electrode layer, the stack having a sidewall; forming a first dielectric layer over the stack; and removing a portion of the first dielectric layer, a remaining portion of the first dielectric layer adjoining the sidewall of the stack, the remaining portion of the first dielectric layer having a height above a thickness of the MTJ layers and below a thickness of the stack.