SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS

摘要

The present technique relates to a solid-state imaging device and an imaging apparatus that enable provision of a solid-state imaging device having superior color separation and high sensitivity.;The solid-state imaging device includes a semiconductor layer 11 in which a surface side becomes a circuit formation surface, photoelectric conversion units PD1 and PD2 of two layers or more that are stacked and formed in the semiconductor layer 11, and a longitudinal transistor Tr1 in which a gate electrode 21 is formed to be embedded in the semiconductor layer 11 from a surface 15 of the semiconductor layer 11. The photoelectric conversion unit PD1 of one layer in the photoelectric conversion units of the two layers or more is formed over a portion 21A of the gate electrode 21 of the longitudinal transistor Tr1 embedded in the semiconductor substrate 11 and is connected to a channel formed by the longitudinal transistor Tr1.

主权项

1. A solid-state imaging device comprising:
a semiconductor layer with oppositely facing first and second sides; first and second photoelectric converters between the first and second sides of the semiconductor layer, the first photoelectric converter being between the first side and the second photoelectric converter; and a longitudinal transistor with a gate electrode embedded in the semiconductor layer at the second side, the gate electrode extending to the first photoelectric converter, wherein, the first photoelectric converter and the longitudinal transistor overlap.