发明名称 MEMORY SYSTEM AND METHOD FOR MANAGING FAIL MEMORY CELL IN MEMORY DEVICE
摘要 Disclosed are a memory system and a method for managing a fail memory cell of a semiconductor memory. The memory system includes a memory which includes a memory cell array which includes a plurality of memory blocks composed of a plurality of memory cells and a cache memory which includes a plurality of unit cache blocks which have the same memory capacity as the storage capacity of the memory block and are smaller than the page frame unit of the memory cell array which is blocked by an operating system. The memory system further includes a memory controller which replaces the corresponding memory block including the fail memory cell by the unit cache block when at least one fail memory cell is detected in the memory blocks.
申请公布号 KR20150057155(A) 申请公布日期 2015.05.28
申请号 KR20130140131 申请日期 2013.11.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO, SANG YEUN
分类号 G06F11/16;G06F12/08 主分类号 G06F11/16
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