| 摘要 |
PROBLEM TO BE SOLVED: To improve the performance of a semiconductor device.SOLUTION: A plurality of unit MISFET elements connected in parallel with each other to make up a power MISFET are formed in an LDMOSFET formation region LR of a main surface of a semiconductor substrate SB. A control circuit that controls a gate voltage of the power MISFET is formed in a driver circuit region DR on the main surface of the semiconductor substrate SB. A wiring structure having a plurality of wiring layers made of a same kind of metal material is formed on the semiconductor substrate SB. Gate electrodes GE of the plurality of unit MISFET elements formed in the LDMOSFET formation region LR are electrically connected to each other via gate wires M1G, M2G, and M3G formed in each of all of the plurality of wiring layers made of the same kind of metal material. |
