| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a configuration that can suppress a variation in parasitic capacitance caused by application of a voltage to a capacitor, and that facilitates highly-accurate determination of a substantial capacitance of the capacitor in a circuit, in a semiconductor device in which the capacitor is arranged above a semiconductor substrate.SOLUTION: In a semiconductor device 1, a capacitor C1 is laminated above a semiconductor substrate 15 via a first insulating film 8. In the semiconductor substrate 15, a first semiconductor layer 3 of a first conductivity type is formed at a position apart from a surface 15a, and a second semiconductor layer 5 of the first conductivity type having a configuration with an impurity concentration higher than that of the first semiconductor layer 3 is formed at a position closer to the surface 15a from the first semiconductor layer 3. In addition, the second semiconductor layer 5 has a configuration connected with a conducting path 21 of a predetermined potential.</p> |
