发明名称 MULTI-MODE THIN FILM DEPOSITION APPARATUS AND METHOD OF DEPOSITING A THIN FILM
摘要 A multi-mode thin film deposition apparatus including a reaction chamber, a carrying seat, a showerhead, an inert gas supplying source, a first gas inflow system and a second gas inflow system is provided. The carrying seat is disposed in the reaction chamber. The showerhead has a gas mixing room and gas holes disposed at a side of the gas mixing room. The gas mixing room is connected to the reaction chamber through the plurality of gas holes which faces the carrying seat. The first gas inflow system is connected to the reaction chamber and supplies a first process gas during a first thin film deposition process mode. The inert gas supplying source is connected to the gas mixing room for supplying an inert gas. The second gas inflow system is connected to the gas mixing room to supply a second process gas during a second thin film deposition process mode.
申请公布号 US2015147890(A1) 申请公布日期 2015.05.28
申请号 US201314138147 申请日期 2013.12.23
申请人 Industrial Technology Research Institute 发明人 Lin Kung-Liang;Chen Chien-Chih;Tung Fu-Ching;Chen Chih-Yung;Lin Shih-Chin;Lin Kuan-Yu;Chang Chia-Hao;Wu Shieh-Sien
分类号 H01L51/52;C23C16/505;C23C16/458;C23C16/455;H01L21/02 主分类号 H01L51/52
代理机构 代理人
主权项 1. A multi-mode thin film deposition apparatus, comprising: a reaction chamber, having a first opening and a second opening penetrating through the reaction chamber, the first opening and the second opening having a same axial direction; a carrying seat, disposed in the reaction chamber and suitable to carry a substrate; a first gas inflow system, connected to the first opening and suitable to supply a first process gas during a first thin film deposition process mode; a showerhead, having a gas mixing room and a plurality of gas holes, wherein the plurality of gas holes is disposed at a side of the reaction chamber and faces to the carrying seat, and the gas mixing room is connected to the reaction chamber through the plurality of gas holes; an inert gas supplying source, connected to the gas mixing room of the showerhead and suitable to supply an inert gas which is non-reactive to the first process gas; and a second gas inflow system, connected to the gas mixing room of the showerhead and suitable to supply a second process gas during a second thin film deposition process mode.
地址 Hsinchu TW