| 发明名称 |
SEMICONDUCTOR LASER AND METHOD OF FABRICATING THE SAME |
| 摘要 |
Provided is a method of fabricating a semiconductor laser. The method includes: providing a semiconductor substrate including a first region and a second region; forming a silicon single crystal layer in the second region of the semiconductor substrate by using a selective epitaxial growth process; forming an optical coupler by using the silicon single crystal layer; and forming a laser core structure including a germanium single crystal layer in the first region of the semiconductor substrate by using a selective epitaxial growth process. |
| 申请公布号 |
US2015146755(A1) |
申请公布日期 |
2015.05.28 |
| 申请号 |
US201414279839 |
申请日期 |
2014.05.16 |
| 申请人 |
Electronics and Telecommunications Research Institute |
发明人 |
KIM In Gyoo;KIM Sang Hoon;PARK Jaegyu;KIM Gyungock;JANG Ki Seok |
| 分类号 |
H01S5/10;H01S5/20 |
主分类号 |
H01S5/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a semiconductor laser, the method comprising:
providing a semiconductor substrate including a first region and a second region; forming a silicon single crystal layer in the second region of the semiconductor substrate by using a selective epitaxial growth process; forming an optical coupler by using the silicon single crystal layer; and forming a laser core structure including a germanium single crystal layer in the first region of the semiconductor substrate by using a selective epitaxial growth process. |
| 地址 |
Daejeon KR |
