| 摘要 |
This invention provides a magnetoresistive element that has the following: a semiconductor channel layer (7), a pinned layer (12A) laid out on top of said semiconductor channel layer with a first tunnel layer (81A) interposed therebetween, and a free layer (12B) laid out on top of the semiconductor channel layer with a second tunnel layer (81B) interposed therebetween. The semiconductor channel layer consists essentially of the following: a first region (7A) that contains the interface with the first tunnel layer; a second region (7B) that contains the interface with the second tunnel layer; and a third region (7C). The impurity concentrations of the first and second regions are greater than 1×1019 cm-3, the impurity concentration of the third region is less than or equal to 1×1019 cm-3, the first and second regions are separated by the third region, and the impurity concentrations of the first and second regions decrease monotonically in the thickness direction of the semiconductor channel layer from the interface between the semiconductor channel layer and the first tunnel layer and the interface between the semiconductor channel layer and the second tunnel layer, respectively. |
