发明名称 |
ATOMIC LAYER DEPOSITION OF FILMS COMPRISING SILICON, CARBON AND NITROGEN USING HALOGENATED SILICON PRECURSORS |
摘要 |
<p>Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with CI, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.</p> |
申请公布号 |
WO2015077118(A1) |
申请公布日期 |
2015.05.28 |
申请号 |
WO2014US65421 |
申请日期 |
2014.11.13 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
NGUYEN, VICTOR;LI, NING;BALSEANU, MIHAELA;XIA, LI-QUN;SALY, MARK;THOMPSON, DAVID |
分类号 |
C23C16/455;C23C16/22 |
主分类号 |
C23C16/455 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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