发明名称 |
INTELLIGENT GATE DRIVER FOR IGBT |
摘要 |
A reverse-conducting insulated gate bipolar transistor, particularly a bi-mode insulated gate transistor, is controlled by responding to an ON command by applying high-level gate voltage for a first period, during which a current is fed into a connection point, from which it flows either through the RC-IGBT or along a different path. Based hereon, it is determined whether the RC-IGBT conducts in its forward/IGBT or reverse/diode mode, and the RC-IGBT is either driven at high or low gate voltage. Subsequent conduction mode changes may be monitored in the same way, and the gate voltage may be adjusted accordingly. A special turn-off procedure may be applied in response to an OFF command in cases where the RC-IGBT conducts in the reverse mode, wherein a high-level pulse is applied for a second period before the gate voltage goes down to turn-off level. |
申请公布号 |
EP2783463(B1) |
申请公布日期 |
2015.05.27 |
申请号 |
EP20110787676 |
申请日期 |
2011.11.22 |
申请人 |
ABB TECHNOLOGY AG |
发明人 |
HOSINI, FALAH;MOHAN, MADHAN;PAMULAPATI, SIVA NAGI REDDY;KOPTA, ARNOST;RAHIMO, MUNAF;SCHNELL, RAFFAEL;SCHLAPBACH, ULRICH |
分类号 |
H03K17/0812;H03K17/082;H03K17/18;H03K17/567 |
主分类号 |
H03K17/0812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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