| 摘要 |
There is provided an inductively coupled plasma etching apparatus capable of suppressing a wavelength effect within a RF antenna and performing a plasma process uniformly in both a circumferential and a radial direction. In the plasma etching apparatus, a RF antenna 54 is provided on a dielectric window 52 to generate inductively coupled plasma. The RF antenna 54 includes an inner coil 58, an intermediate coil 60 and an outer coil 62 in the radial direction. The inner coil 58 includes a single inner coil segment 59 or more than one inner coil segments 59 connected in series. The intermediate coil 60 includes two intermediate coil segments 61(1) and 61(2) separated in a circumferential direction and electrically connected with each other in parallel. The outer coil 62 includes three outer coil segments 63(1), 63(2) and 63(3) separated in a circumferential direction and electrically connected with each other in parallel. |
