发明名称 IRREGULAR-SURFACE FORMING METHOD USING PLASMA-ETCHING PROCESS
摘要 <p>The present invention is aiming to provide a irregular-surface forming method using a plasma-etching process which could stably and precisely provide a substrate having predetermined surface irregularities, and an electrode component obtained by the forming method therefrom. Thus, the present invention relates to method of forming a predetermined irregular-surface pattern on a substrate, wherein a plasma-etching process is carried out using a partly oxidized metal salt film having fine irregular-surface as a resist, comprising the following processes (1) to (3); (1)in the first process, a metal salt film is formed on the substrate by coating a liquid material containing a metal salt. (2)in the second process, a fine irregular-surface is formed on the metal salt film, and the metal salt film was converted into the resist by the partial oxidization. (3)in the third process, a predetermined irregular-surface is formed on the substrate by carrying out the plasma-etching process to the substrate with the resist.</p>
申请公布号 EP2551893(B1) 申请公布日期 2015.05.27
申请号 EP20110759047 申请日期 2011.01.05
申请人 LINTEC CORPORATION 发明人 NAGANAWA SATOSHI;KONDO TAKESHI
分类号 H01L21/3065;H01L51/44 主分类号 H01L21/3065
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