SiC SINGLE CRYSTAL INGOT AND PRODUCTION METHOD THEREFOR

摘要

Provided are: a high-quality SiC single crystal ingot that suppresses the generation of inclusions; and a production method for said SiC single crystal ingot. The present invention pertains to a SiC single crystal ingot including a seed crystal substrate and a SiC growth crystal grown using the solution method and using the seed crystal substrate as the origin thereof, said growth crystal having a recessed crystal growth surface and not including inclusions.