| 发明名称 |
ETCHING METHOD, AND METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE PRODUCT AND SEMICONDUCTOR DEVICE USING THE SAME |
| 摘要 |
An etching method, having the step of applying an etching liquid onto a TiN-containing layer in a semiconductor substrate thereby etching the TiN-containing layer, the etching liquid comprising water, and a basic compound and an oxidizing agent in water thereof to be within the range of pH from 8.5 to 14, and the TiN-containing layer having a surface oxygen content from 0.1 mol % to 10 mol %. |
| 申请公布号 |
EP2875521(A1) |
申请公布日期 |
2015.05.27 |
| 申请号 |
EP20130819989 |
申请日期 |
2013.07.17 |
| 申请人 |
FUJIFILM CORPORATION |
发明人 |
MURO, NAOTSUGU;KAMIMURA, TETSUYA;INABA, TADASHI;WATANABE, TAKAHIRO;PARK, KEE YOUNG |
| 分类号 |
H01L21/3213;H01L21/311 |
主分类号 |
H01L21/3213 |
| 代理机构 |
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