HIGH INDIUM UPTAKE AND HIGH POLARIZATION RATIO FOR GROUP-III NITRIDE OPTOELECTRONIC DEVICES FABRICATED ON A SEMIPOLAR (20-2-1) PLANE OF A GALLIUM NITRIDE SUBSTRATE
摘要
<p>A Group-III nitride optoelectronic device fabricated on a semipolar (20-2-1) plane of a Gallium Nitride (GaN) substrate is characterized by a high Indium uptake and a high polarization ratio.</p>
申请公布号
EP2702618(A4)
申请公布日期
2015.05.27
申请号
EP20120777636
申请日期
2012.04.30
申请人
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
发明人
ZHAO, YUJI;TANAKA, SHINICHI;HUANG, CHIA-YEN;FEEZELL, DANIEL F.;SPECK, JAMES S.;DENBAARS, STEVEN P.;NAKAMURA, SHUJI
