发明名称 プラズマ処理装置及びそのガス供給方法
摘要 <p>It is possible to prevent processing gases from being mixed when alternately supplying the processing gases while alternately switching the processing gases and to suppressed a transient phenomenon more efficiently as compared to conventional cases. When supplying at least two kinds of processing gases (e.g., a C4F6 gas and a C4F8 gas) into a processing chamber while alternately switching the at least two kinds of processing gases during a plasma process on a wafer, the supply of each processing gas can be alternately turned on and off by alternately setting an instruction flow rate of a mass flow controller to be a predetermined flow rate and a zero flow rate while a downstream opening/closing valve provided at a downstream side of the mass flow controller is open.</p>
申请公布号 JP5723678(B2) 申请公布日期 2015.05.27
申请号 JP20110121475 申请日期 2011.05.31
申请人 发明人
分类号 H01L21/3065 主分类号 H01L21/3065
代理机构 代理人
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