| 发明名称 |
ION IMPLANTATION AND ANNEALING FOR HIGH EFFICIENCY BACK-CONTACT BACK-JUNCTION SOLAR CELLS |
| 摘要 |
<p>A back contact back junction thin-film solar cell is formed on a thin-film semiconductor solar cell. Preferably the thin film semiconductor material comprises crystalline silicon. Emitter regions, selective emitter regions, and a back surface field are formed through ion implantation and annealing processes.</p> |
| 申请公布号 |
EP2715797(A4) |
申请公布日期 |
2015.05.27 |
| 申请号 |
EP20120793962 |
申请日期 |
2012.05.29 |
| 申请人 |
SOLEXEL, INC. |
发明人 |
MOSLEHI, MEHRDAD, M.;RANA, VIRENDRA, V.;KAPUR, PAWAN |
| 分类号 |
H01L31/18 |
主分类号 |
H01L31/18 |
| 代理机构 |
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