| 摘要 |
Film-formation rate can be increased in the pre-sputtering and in the subsequent sputtering onto a substrate or the like, and sputtering failures such as splashes can be inhibited, by making an Al-based alloy or Cu-based alloy spurting target fulfill the following requirements (1) and/or (2) when the total area ratio of crystal orientations <001>±15°, <011>±15°, <111>±15°, <112>±15°, and <012>±15° in the sputtering surface normal direction in the depth within 1 mm from the uppermost surface of the sputtering target is referred to as a P value: (1) the area ratio PA of <011>±15° to the P value: 40% or lower; and (2) the total area ratio PB of <001>±15° and <111>±15° to the P value: 20% or higher. |
