III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

The present invention relates to a III group nitride semiconductor light emitting device which includes an n-type III group nitride semiconductor layer with an n-type conductivity, an n-side electrode which is electrically connected to the n-type nitride semiconductor layer, a p-type III group nitride semiconductor layer with a p-type conductivity, and a p-side electrode which is electrically connected to the p-type III group nitride semiconductor layer. A reflection layer including at least one among at least two alloys selected among Al, Ag, Pt, and Ni is formed the n-side electrode or the p-side electrode. According to the present invention, light extraction efficiency is improved by minimizing the absorption of light reflected by a molding member in a packaging state by the reflection layer.