| 摘要 |
<p>It is an object to provide a semiconductor device having excellent electric characteristics or high reliability, or a manufacturing method thereof. A semiconductor device including a gate electrode, an oxide semiconductor layer overlapping with the gate electrode, a source electrode and a drain electrode in contact with the oxide semiconductor layer, and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer is provided. The oxide semiconductor layer is formed by a facing target sputtering method. The carrier concentration of the oxide semiconductor is less than 1×1012/cm3.</p> |
