发明名称 SEMICONDUCTOR CONSTRUCTIONS, MEMORY CELLS, MEMORY ARRAYS AND METHODS OF FORMING MEMORY CELLS
摘要 Some embodiments include a construction having oxygen-sensitive structures directly over spaced-apart nodes. Each oxygen-sensitive structure includes an angled plate having a horizontal portion along a top surface of a node and a non-horizontal portion extending upwardly from the horizontal portion. Each angled plate has an interior sidewall where an inside corner is formed between the non-horizontal portion and the horizontal portion, an exterior sidewall in opposing relation to the interior sidewall, and lateral edges. Bitlines are over the oxygen-sensitive structures, and have sidewalls extending upwardly from the lateral edges of the oxygen-sensitive structures. A non-oxygen-containing structure is along the interior sidewalls, along the exterior sidewalls, along the lateral edges, over the bitlines, and along the sidewalls of the bitlines. Some embodiments include memory arrays, and methods of forming memory cells.
申请公布号 EP2875526(A1) 申请公布日期 2015.05.27
申请号 EP20130820188 申请日期 2013.06.28
申请人 MICRON TECHNOLOGY, INC. 发明人 PELLIZZER, FABIO;PERRONE, CINZIA
分类号 H01L21/8247;H01L27/115 主分类号 H01L21/8247
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