Photo resist trimmed line end space

摘要

One or more techniques or systems for forming a line end space structure are provided herein. In some embodiments, a first patterned second hard mask (HM) region is formed above a first HM region. Additionally, at least some of the first patterned second HM region is removed. In some embodiments, a first sacrificial HM region and a second sacrificial HM region are formed above at least one of the first patterned second HM region or the first HM region. Photo resist (PR) is patterned above the second sacrificial HM region, and a spacer region is deposited above the patterned PR and second sacrificial HM region. In some embodiments, at least some of at least one of the spacer region, the PR, or the respective sacrificial HMs is removed. In this way, a line end space structure associated with an end-to-end space is formed.

主权项

1. A method for forming a line end space structure, comprising:
forming a hard mask (HM) region above a base region in which a metal line is formed; forming a second HM region above the HM region; patterning the second HM region to form a patterned second HM region, the patterned second HM region defining a line end space structure; patterning the HM region using the patterned second HM region to form a patterned HM region; and removing at least some of the base region not covered by the patterned HM region to form the line end space structure.