Method for producing transparent conductive film, transparent conductive film, transparent conductive substrate and device comprising the same

摘要

Provided is a method for producing a transparent conductive film which is formed via a coating step, a drying step and a baking step, wherein the baking step is characterized in that the dried coating film containing the organic metal compound as the main component is baked by being heated to a baking temperature or higher, at which at least the inorganic component is crystallized, under an oxygen-containing atmosphere having a dewpoint of −10° C. or lower, whereby an organic component contained in the dried coating film is removed therefrom by a heat decomposition, a combustion or the combination thereof to thereby form a conductive oxide microparticle layer densely filled with conductive oxide microparticles containing the metal oxide as a main component.

主权项

1. A method for producing a transparent conductive film, comprising the steps of:
(a) coating a heat-resistant substrate with a coating liquid to form a transparent conductive coating film containing an organic metal compound as a main component; (b) drying the transparent conductive coating film to form a dried coating film; (c) baking the dried coating film obtained in step (b) to form an inorganic film containing an inorganic component comprising a metal oxide as a main component by heating to at least a baking temperature at which at least the inorganic component is crystallized in an oxygen-containing atmosphere having a dewpoint of −10° C. or lower, whereby an organic component contained in the dried coating film is removed therefrom by heat decomposition, combustion or a combination thereof, to thereby form a conductive oxide microparticle layer densely filled with conductive oxide microparticles containing the metal oxide as a main component; wherein the organic metal compound comprises at least one compound selected from the group consisting of organic indium compounds, organic tin compounds and organic zinc compounds, and wherein the metal oxide consists of at least one oxide selected from the group consisting of indium oxide, tin oxide and zinc oxide, and (d) subsequent to step (c) baking at a temperature of 300° C. or higher under an oxygen-containing atmosphere having a dewpoint of 0° C. or higher.