发明名称 Semiconductor substrate including a cooling channel and method of forming a semiconductor substrate including a cooling channel
摘要 A semiconductor substrate for use in an integrated circuit, the semiconductor substrate including a channel defined on a surface of the substrate. The channel includes a first wall, a second wall, and a third wall. The first wall is recessed from the surface. The second wall extends from the surface to the first wall. The third wall extends from the surface to the first wall and faces the second wall across the channel. At least one of the second wall and the third wall includes a plurality of structures projecting into the channel from the second wall or the third wall.
申请公布号 US9041193(B2) 申请公布日期 2015.05.26
申请号 US201414176538 申请日期 2014.02.10
申请人 Hamilton Sundstrand Corporation 发明人 Bouras Scott R.
分类号 H01L23/34;H01L23/367;H01L25/16;H01L25/00 主分类号 H01L23/34
代理机构 Kinney & Lange, P.A. 代理人 Kinney & Lange, P.A.
主权项 1. A semiconductor substrate including a cooling channel for use in an integrated circuit, the substrate comprising: a cooling channel defined on a surface of the semiconductor substrate, the cooling channel including: a first wall recessed from the surface; a second wall extending from the surface to the first wall; and a third wall extending from the surface to the first wall, the third wall facing the second wall across the cooling channel; wherein at least one of the second wall and the third wall include a plurality of structures projecting into the cooling channel from the second wall or the third wall.
地址 Windsor Locks CT US