Method for fabricating thin film transistor array substrate

摘要

A method of fabricating a thin film transistor array substrate is disclosed. The method includes: sequentially forming a first passivation layer, a photo acryl layer and a first transparent metal layer on the substrate provided with the source/drain electrodes and so on; forming a common electrode, which is disposed in the pixel region, and first through third contact holes, which are positioned in regions of the drain electrode, the gate pad and the data pad, respectively, using one of a half-tone mask and a diffractive mask; forming a second passivation layer on the substrate provided with the first through third contact holes; exposing the drain electrode, the gate pad and the data pad by removing the first and second passivation layers from the drain electrode region, the gate pad region and data pad region; and forming a pixel electrode on the second passivation layer opposite to the common electrode by forming a second transparent metal layer on the substrate and performing a third mask procedure for the second transparent metal layer.

主权项

1. A method of fabricating a thin film transistor array substrate, the method comprising:
preparing a substrate defined into a display area and a non-display area; forming a gate electrode and a gate line, which are disposed in the display area, and a gate pad and a data pad, which are disposed in the non-display area, by forming a metal film on the substrate and performing a first mask procedure for the metal film; sequentially forming a gate insulation film and a channel layer on the substrate provided with the gate electrode; forming source/drain electrodes and a data line by forming a source/drain metal film on the substrate provided with the channel layer and performing a second mask procedure for the source/drain metal film; sequentially forming a first passivation layer, a photo acryl layer and a first transparent metal layer on the substrate provided with the source/drain electrodes; forming a common electrode, which is disposed in the pixel region, and first through third contact holes, which are positioned in regions of the drain electrode, the gate pad and the data pad, respectively, using one of a half-tone mask and a diffractive mask; forming a second passivation layer on the substrate provided with the first through third contact holes; exposing the drain electrode, the gate pad and the data pad by removing the first and second passivation layers from the drain electrode region, the gate pad region and data pad region; and forming a pixel electrode on the second passivation layer opposite to the common electrode by forming a second transparent metal layer on the substrate and performing a third mask procedure for the second transparent metal layer.