AN EXTREME ULTRAVIOLET LITHOGRAPHY PROCESS AND MASK

摘要

A system of an extreme ultraviolet lithography (EUVL) is disclosed. The system includes a mask having reflective phase-shift-grating-blocks (PhSGBs). The system also includes an illumination to expose the mask to produce a resultant reflected light from the mask. The resultant reflected light contains mainly diffracted lights. The system also has projection optics box (POB) to collect and direct resultant reflected light toward a target.