发明名称 |
A RESISTIVE RANDOM ACCESS MEMORY (RRAM) WITH IMPROVED FORMING VOLTAGE CHARACTERISTICS AND METHOD FOR MAKING |
摘要 |
The present disclosure provides resistive random access memory (RRAM) structures and methods of making the same. The RRAM structures include a bottom electrode having protruded step portion that allows formation of a self-aligned conductive path with a top electrode during operation. The protruded step portion may have an inclination angle of about 30 degrees to 150 degrees. Multiple RRAM structures may be formed by etching through a RRAM stack. |
申请公布号 |
KR20150056454(A) |
申请公布日期 |
2015.05.26 |
申请号 |
KR20140145438 |
申请日期 |
2014.10.24 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHEN JONATHAN TEHAN;CHOU CHUNG CHENG;LEE PO HAO;TU KUO CHI |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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