Semiconductor device

摘要

According to one embodiment, the semiconductor device is provided with a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a pair of first conductors, a pair of second conductors, first wiring layers, and second wiring layers. Each pair of first and second conductors is formed in first and second trenches via the first and second insulating films and is opposite to the first semiconductor layer and the second semiconductor layer. The first wiring layers have main body parts and plural convex parts. Plural convex parts extend from the main body parts and are electrically connected with the first conductors via a first opening part of a first interlayer insulating film. The second wiring layers are electrically connected with the second conductors via a second opening part of the first interlayer insulating film.

主权项

1. A semiconductor device, comprising:
a first electrode layer; a drift layer; a plurality of trenches, spaced from one another, extending into the drift layer, each of the trenches having sidewalls and a base and extending in a first direction in a generally parallel orientation across a portion of the drift layer, at least a portion of the drift layer located between the trenches and the first electrode layer, the trenches further including:
a first insulating film formed therein,a field plate electrode in the trench, anda conductor electrode positioned between the field plate electrode and the sidewall of the trench on at least one side of the field plate electrode; a source layer disposed outwardly of, and adjacent a side wall thereof adjacent the location of a conductor electrode; a second insulating film overlying the drift layer, the source layer and the trenches; a second electrode layer extending across the second insulating layer in a second direction, and crossing the plurality of trenches, the second electrode in electrical contact with the conductor electrode of at least a first trench; and a third electrode layer, extending over and in electrical contact with a conductor electrode in a second trench other than the first trench and which is not in electrical contact with the second electrode layer.