Vertical transistor with surrounding gate and work-function metal around upper sidewall, and method for manufacturing the same

摘要

A method of manufacturing a semiconductor device includes a first step of forming a fin-shaped semiconductor layer, a first insulating film around the fin-shaped semiconductor layer, and a pillar-shaped semiconductor layer on the fin-shaped semiconductor layer. A second step forms a gate insulating film around the pillar-shaped semiconductor layer, a gate electrode around the gate insulating film, and a gate line. A third step forms a first first-conductivity-type diffusion layer in an upper portion of the pillar-shaped semiconductor layer and a second first-conductivity-type diffusion layer in a lower portion of the pillar-shaped semiconductor layer and an upper portion of the fin-shaped semiconductor layer. A fourth step includes depositing, planarizing, and etching-back a first interlayer insulating film to expose an upper portion of the pillar-shaped semiconductor layer, depositing a first metal, and etching the metal to form a first sidewall around the upper portion of the pillar-shaped semiconductor layer.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate, forming a first insulating film around the fin-shaped semiconductor layer, and forming a pillar-shaped semiconductor layer in an upper portion of the fin-shaped semiconductor layer; a second step of forming a gate insulating film around the pillar-shaped semiconductor layer, forming a gate electrode around the gate insulating film, and forming a gate line connected to the gate electrode; a third step of forming a first first-conductivity-type diffusion layer in an upper portion of the pillar-shaped semiconductor layer and forming a second first-conductivity-type diffusion layer in a lower portion of the pillar-shaped semiconductor layer and in an upper portion of the fin-shaped semiconductor layer; and a fourth step of depositing a first interlayer insulating film, planarizing and etching-back the first interlayer insulating film to expose an upper portion of the pillar-shaped semiconductor layer, depositing a first metal after exposing the upper portion of the pillar-shaped semiconductor layer, and etching the metal to form a first sidewall composed of the metal around the sidewall of the upper portion of the pillar-shaped semiconductor layer.