| 发明名称 | Memory device with resistive random access memory (ReRAM) | ||
| 摘要 | A method includes, in a data storage device that includes a non-volatile memory and a resistive random access memory (ReRAM) on the same die, receiving data from a memory controller via a bus. The method also includes routing the data to data latches of the non-volatile memory via a first path and to the ReRAM via a second path distinct from the first path. | ||
| 申请公布号 | US9042160(B1) | 申请公布日期 | 2015.05.26 |
| 申请号 | US201414323704 | 申请日期 | 2014.07.03 |
| 申请人 | SANDISK TECHNOLOGIES INC. | 发明人 | Gorobets Sergey Anatolievich;Olbrich Aaron Keith;D'Abreu Manuel Antonio;Hu Xinde |
| 分类号 | G11C7/10;G11C7/00;G11C16/10;G11C5/06;G11C13/00;G11C8/16 | 主分类号 | G11C7/10 |
| 代理机构 | Toler Law Group, PC | 代理人 | Toler Law Group, PC |
| 主权项 | 1. A method comprising: in a data storage device that includes a non-volatile memory and a resistive random access memory (ReRAM) on the same die, performing: receiving data from a memory controller via a bus;routing the data to data latches of the non-volatile memory via a first path of the bus; andconcurrently with routing the data to the data latches, routing the data to the ReRAM via a second path of the bus that is distinct from the first path. | ||
| 地址 | Plano TX US | ||