Methods and apparatus for applying periodic voltage using direct current

摘要

Methods and apparatus for applying pulsed DC power to a plasma processing chamber are disclosed. In some implementations, frequency of the applied power is varied to achieve desired processing effects such as deposition rate, arc rate, and film characteristics. In addition, a method and apparatus are disclosed that utilize a relatively high potential during a reverse-potential portion of a particular cycle to mitigate possible nodule formation on the target. The relative durations of the reverse-potential portion, a sputtering portion, and a recovery portion of the cycle are adjustable to effectuate desired processing effects.

主权项

1. A method for applying pulsed DC power to a plasma processing chamber, the method comprising:
applying a negative potential to a cathode during a sputtering portion of a particular cycle of the pulsed DC power for a first time duration, the negative potential having a magnitude, whereby the application of the negative potential effectuates sputtering; applying, during a reverse-potential portion of the particular cycle, a positive potential to the cathode for a second time duration that is less than the first time duration, a magnitude of the positive potential is the same as the magnitude of the negative potential; and applying, during a recovery portion of the particular cycle, a recovery potential for a third time duration that has a magnitude that is less than the magnitude of the negative potential and is less than the magnitude of the positive potential; wherein the sum of the second and third time durations is less than the first time duration; the sum of the second and third time durations is less than ten percent of the particular cycle; and the second duration is less than ten percent of the particular cycle and at least one microsecond.