| 摘要 |
A light emitting device according to an embodiment comprises a first semiconductor doped by a first dopant; an active layer located on the first semiconductor semiconductor layer; a second semiconductor layer located on the active layer, and doped with a second dopant having polarity opposite to the first dopant; and multiple grooves formed on the upper surface of the second semiconductor layer, wherein the grooves is characterized by comprising a center point being the center of the grooves and a boundary part surrounding the center point and forming a boundary between the multiple grooves. The cetner point is located adjacent to the active layer more than the boundary part. |
