Magnetic sensor with recessed AFM shape enhanced pinning and soft magnetic bias

摘要

A magnetic read sensor having an antiferromagnetic located embedded within a magnetic shield of the sensor so that the antiferromagnetic layer can pin the magnetization of the pinned layer without contributing to read gap thickness. The sensor is configured with a pinned layer having a free layer structure located within an active area of the sensor and a pinned layer that extends beyond the free layer and active area of the sensor. The antiferromagnetic layer can be located outside of the active and exchange coupled with the extended portion of the pinned layer.

主权项

1. A magnetoresistive sensor, comprising:
first and second magnetic shields; a sensor stack sandwiched between the first and second magnetic shields, the sensor stack including a pinned layer structure, a free layer structure and a non-magnetic layer sandwiched between the pinned layer structure and the free layer structure, the free layer structure extending to a first stripe height measured from an air bearing surface and the pinned layer structure extending to a second stripe height measured from the air bearing surface, the second stripe height being greater than the first stripe height; and a layer of anti-ferromagnetic material, embedded in the first magnetic shield and exchange coupled with a portion of the pinned layer structure; wherein the free layer structure defines an active sensor area and wherein the first shield includes a magnetic base layer and a magnetic fill layer formed over the magnetic base layer, the magnetic fill layer being located in the active sensor area; the layer of anti-ferromagnetic material having a contacting interface with the magnetic fill layer, the interface being located substantially parallel to the air bearing surface; wherein the free layer structure has first and second sides, the distance between which defines a free layer structure width, and wherein the layer of anti-ferromagnetic material has a width that is greater than the free layer structure width.