Image sensors including channel stop regions surrounding photodiodes and methods of fabricating the same

摘要

Image sensors are provided. In the image sensor, an area of a device isolation layer may be reduced and elements may be isolated from each other by a channel stop region extending between the photoelectric conversion region and the device isolation layer, such that a dark current property of the image sensor may be improved.

主权项

1. An image sensor comprising:
a substrate including a plurality of pixel regions; a photoelectric converting part in the substrate in each of the pixel regions; a channel stop region surrounding a portion of the photoelectric converting part, in plan view; a pixel voltage applying region spaced apart from the photoelectric converting part; and a first device isolation layer adjacent to one sidewall of the pixel voltage applying region, the first device isolation layer spaced apart from a sidewall of the photoelectric converting part, wherein the channel stop region is disposed between the pixel voltage applying region and the photoelectric converting part and between the first device isolation layer and the photoelectric converting part.