| 发明名称 | Image device and methods of forming the same | ||
| 摘要 | A method of forming of an image sensor device includes a substrate having a pixel region and a periphery region. A plurality of first trenches is etched in the periphery region. Each of the first trenches has a depth D1. A mask layer is formed over the substrate. The mask layer has a plurality of openings in the pixel region. A spacer is formed in an interior surface of each opening. A plurality of second trenches is etched through each opening having the spacer in the pixel region. Each of the second trenches has a depth D2. The depth D1 is larger than the depth D2. | ||
| 申请公布号 | US9040891(B2) | 申请公布日期 | 2015.05.26 |
| 申请号 | US201213492348 | 申请日期 | 2012.06.08 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Chen U-Ting;Yaung Dun-Nian;Liu Jen-Cheng;Shih Yu-Hao;Wang Chih-Chien;Chou Shih Pei;Huang Wei-Tung;Wu Cheng-Ta |
| 分类号 | H01L27/00;H01L21/033;H01L27/146 | 主分类号 | H01L27/00 |
| 代理机构 | Lowe Hauptman & Ham, LLP | 代理人 | Lowe Hauptman & Ham, LLP |
| 主权项 | 1. A method of forming an image sensor device, the method comprising: etching a plurality of first trenches in a periphery region of a substrate, each of the first trenches having a depth D1; forming a mask layer over the substrate, the mask layer having a plurality of openings in a pixel region of the substrate; forming a spacer on an interior surface of each opening; and etching a plurality of second trenches through each opening having the spacer in the pixel region, each of the second trenches having a depth D2, wherein the depth D1 is larger than the depth D2. | ||
| 地址 | TW | ||